aod468/AOI468 300v,11.5a n-channel mosfet 350v@150 i d (at v gs =10v) 11.5a r ds(on) (at v gs =10v) <0.42 ? 100% uis tested! 100% r g tested! symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r ja r cs r jc maximum case-to-sink a maximum junction-to-case d,f c/w c/w 0.7 0.5 1 derate above 25 o c 150 1 a 3.8 single pulsed avalanche energy h 430 mj v/ns 5 p d pulsed drain current c continuous drain current b mj avalanche current c 216 repetitive avalanche energy c the aod468 & AOI468 have been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.these parts are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. v ds v units parameter absolute maximum ratings t a =25c unless otherwise noted maximum drain-source voltage 300 v 30 gate-source voltage t c =100c a i d t c =25c 11.5 8.3 29 typical w w/ o c maximum lead temperature for soldering p ur p ose, 1/8" from case for 5 seconds 300 c junction and storage temperature range -50 to 175 c power dissipation b maximum junction-to-ambient a,g t c =25c - 55 maximum thermal characteristics units c/w 45 parameter g d s 1 / 6 general description product summary general description www.freescale.net.cn
symbol min typ max units 300 350 bv dss / ? tj 0.29 v/ o c 1 10 i gss gate-body leakage current 100 n v gs(th) gate threshold voltage 3.4 4 4.5 v r ds(on) 0.31 0.42 ? g fs 11 s v sd 0.74 1 v i s maximum body-diode continuous current 12 a i sm 29 a c iss 500 632 790 pf c oss 55 90 125 pf c rss 3 7 11 pf r g 1.3 2.7 4.1 ? q g 10 12.8 16 nc q gs 4.4 nc q gd 4.3 nc t d(on) 18 ns t r 31 ns t d(off) 36 ns t f 20 ns t rr 130 170 205 ns q rr 1 1.3 1.6 c this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. drain-source breakdown voltage body diode reverse recovery time static drain-source on-resistance dynamic parameters turn-on rise time forward transconductance v gs =10v, v ds =150v, i d =12a, r g =25 ? gate resistance diode forward voltage reverse transfer capacitance i f =12a,di/dt=100a/ s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bv dss a v zero gate voltage drain current id=250a, vgs=0v i dss zero gate voltage drain current v ds =300v, v gs =0v i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =150c v ds =5v i d =250 a v ds =240v, t j =125c i s =1a,v gs =0v v ds =40v, i d =6a v ds =0v, v gs =30v v gs =10v, i d =6a total gate charge v gs =10v, v ds =240v, i d =12a gate source charge gate drain charge body diode reverse recovery charge i f =12a,di/dt=100a/ s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime turn-off delaytime v gs =0v, v ds =0v, f=1mhz turn-off fall time a. the value of r ja is measured with the device in a still air environment with t a =25c. b. the power dissipation p d is based on t j(max) =175c in a to252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. g.these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. h. l=60mh, i as =3.8a, v dd =150v, r g =10 ? , starting t j =25c aod468/AOI468 300v,11.5a n-channel mosfet 2 / 6 www.freescale.net.cn
typical electrical and thermal characteristic s 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c i d =30a 25c 125c 0 5 10 15 20 0 5 10 15 20 25 30 v ds (volts) fig 1: on-region characteristics i d (a) v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 246810 v gs (volts) figure 2: transfer characteristics i d (a) -55c v ds =40v 25c 125c 0.0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( ? ) v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =6a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 5: break down vs. junction temperature bv dss (normalized) rev0: dec 2010 www.aosmd.com page 3 of 6 aod468/AOI468 300v,11.5a n-channel mosfet
typical electrical and thermal characteristic s 0 3 6 9 12 15 048121620 q g (nc) figure 7: gate-charge characteristics v gs (volts) v ds =240v i d =12a 1 10 100 1000 10000 0.1 1 10 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 10ms 1ms dc r ds(on) limited t j(max) =175c t c =25c 100 s 0 200 400 600 800 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) t j(max) =175c t c =25c 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =1c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse sin g le puls e t on t p d aod468/AOI468 300v,11.5a n-channel mosfet 4 / 6 www.freescale.net.cn
typical electrical and thermal characteristic s 0 30 60 90 120 150 180 0 25 50 75 100 125 150 175 t case (c) figure 12: power de-rating (note b) power dissipation (w) 0 3 6 9 12 0 25 50 75 100 125 150 175 t case (c) figure 13: current de-rating (note b) current rating i d (a) 0 100 200 300 400 0.01 0.1 1 10 100 1000 pulse width (s) figure 14: single pulse power rating junction-to-ambient (note g) power (w) t a =25c 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 pulse width (s) figure 15: normalized maximum transient thermal impedance (note g) z ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =55c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d aod468/AOI468 300v,11.5a n-channel mosfet 5 / 6 www.freescale.net.cn
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd char ge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d( on) t on t d(of f ) t f t of f vdd vgs id vgs rg du t - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds is d is d diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar aod468/AOI468 300v,11.5a n-channel mosfet 6 / 6 www.freescale.net.cn
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